193 18 symbol v ds v gs i dm i ar e ar t j ,t stg symbol typ max 15 20 41 50 r q jc 2.1 3 t a =70c 2.1 powerdissipation a t a =25c p dsm 3 45 a mj w junctionandstoragetemperaturerange a p d c 5025 55to175 t c =100c avalanchecurrent c 30 i d 5040 150 pulseddraincurrent c powerdissipation b t c =25c continuousdraincurrent g t c =25c t c =100c repetitiveavalancheenergyl=0.1mh c absolute maximum ratings t a =25c unless otherwise noted vv 20 gatesourcevoltage drainsourcevoltage 25 maximum units parameter t10s r q ja c/w maximumjunctiontoambient a steadystate c/w w maximumjunctiontocase b steadystate c/w thermal characteristicsparameter units maximumjunctiontoambient a AOD456n-channel enhancement mode field effect transistor features v ds (v)=25v i d =50a(v gs =10v) r ds(on) <6m w (v gs =10v) r ds(on) <10m w (v gs =4.5v) 100% uis tested! 100% rg tested! general description theAOD456usesadvancedtrenchtechnologyanddesigntoprovideexcellentr ds(on) withlowgate charge.thisdeviceissuitableforuseinpwm,loadswitchingandgeneralpurposeapplications. rohscompliant halogenfree* g ds g to-252 d-pak top view s bottom view d g s alpha & omega semiconductor, ltd. www.aosmd.com
AOD456 symbol min typ max units bv dss 25 v 1 t j =55c 5 i gss 100 na v gs(th) 1 1.74 3 v i d(on) 100 a 5 6 t j =125c 7.3 8 10 g fs 45 s v sd 0.74 1 v i s 50 a c iss 1850 2220 pf c oss 472 pf c rss 275 pf r g 0.86 1.5 w q g (10v) 31.7 38 nc q g (4.5v) 15.7 19 nc q gs 5.8 nc q gd 8.2 nc t d(on) 7.5 ns t r 14 ns t d(off) 30 ns t f 11.5 ns t rr 30.9 37 ns q rr 20.3 nc thisproducthasbeendesignedandqualifiedfortheconsumermarket.applicationsorusesascriticalcomponentsinlifesupportdevicesorsystemsarenotauthorized.aosdoesnotassumeanyliabilityarising outofsuchapplicationsorusesofitsproducts.aosreservestherighttoimproveproductdesign, functionsandreliabilitywithoutnotice. bodydiodereverserecoverycharge i f =20a,di/dt=100a/ m s maximumbodydiodecontinuouscurrentinputcapacitance outputcapacitance turnondelaytime dynamic parameters turnonrisetimeturnoffdelaytime v gs =10v,v ds =12.5v, r l =0.625 w ,r gen =3 w gateresistance v gs =0v,v ds =0v,f=1mhz turnofffalltime totalgatecharge v gs =10v,v ds =12.5v,i d =20a gatesourcechargegatedraincharge totalgatecharge m w forwardtransconductancediodeforwardvoltage staticdrainsourceonresistance i s =1a,v gs =0v v ds =5v,i d =20a v gs =4.5v,i d =20a r ds(on) i dss m a gatethresholdvoltage v ds =v gs , i d =250 m a v ds =20v,v gs =0v v ds =0v,v gs =20v zerogatevoltagedraincurrentgatebodyleakagecurrent electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions bodydiodereverserecoverytime drainsourcebreakdownvoltageonstatedraincurrent i d =250ua,v gs =0v v gs =10v,v ds =5v v gs =10v,i d =30a reversetransfercapacitance i f =20a,di/dt=100a/ m s v gs =0v,v ds =12.5v,f=1mhz switching parameters a:thevalueofr q ja ismeasuredwiththedevicemountedon1in 2 fr4boardwith2oz.copper,inastillairenvironmentwitht a =25c.thepower dissipationp dsm isbasedonr q ja andthemaximumallowedjunctiontemperatureof150c.thevalueinanygivenapplicationdependsonthe user'sspecificboarddesign,andthemaximumtemperatureof175cmaybeusedifthepcballowsit.b.thepowerdissipationp d isbasedont j(max) =175c,usingjunctiontocasethermalresistance,andismoreusefulinsettingtheupperdissipation limitforcaseswhereadditionalheatsinkingisused.c:repetitiverating,pulsewidthlimitedbyjunctiontemperaturet j(max) =175c. d.ther q ja isthesumofthethermalimpedencefromjunctiontocaser q jc andcasetoambient. e.thestaticcharacteristicsinfigures1to6areobtainedusing<300 m spulses,dutycycle0.5%max. f.thesecurvesarebasedonthejunctiontocasethermalimpedencewhichismeasuredwiththedevicemountedtoalargeheatsink,assumingamaximumjunctiontemperatureoft j(max) =175c. g.themaximumcurrentratingislimitedbybondwires.h.thesetestsareperformedwiththedevicemountedon1in2fr4boardwith2oz.copper,inastillairenvironmentwitht a =25c.thesoa curveprovidesasinglepulserating.*thisdeviceisguaranteedgreenafterdatacode8x11(sep1 st 2008). rev4:spe2008 alpha & omega semiconductor, ltd. www.aosmd.com
AOD456 typical electrical and thermal characteristics 4.63 494 593 692 830 193 1859 142 0 10 20 30 40 50 60 1 2 3 4 5 v gs (volts) figure 2: transfer characteristics i d (a) 2 4 6 8 10 0 10 20 30 40 50 60 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 0.00001 0.0001 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v,20a v gs =4.5v,20a 4 6 8 10 12 3 4 5 6 7 8 9 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =10v i d =20a 25c 125c 0 20 40 60 80 100 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3.5 5v 4.0v 10v 6v 4.5v v gs =4.5v alpha & omega semiconductor, ltd. www.aosmd.com
AOD456 typical electrical and thermal characteristics 4.63 494 593 692 830 193 1859 142 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z q qq q jc normalized transient thermal resistance c oss c rss v ds =12.5v i d =20a singlepulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =3c/w t on t p d indescendingorderd=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse t j(max) =175c t c =25c 0.1 1 10 100 1000 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 10 m s 100 m s 1ms dc r ds(on) limited t j(max) =175c,t c =25c alpha & omega semiconductor, ltd. www.aosmd.com
AOD456 typical electrical and thermal characteristics 4.63 494 593 692 830 193 1859 142 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z q qq q ja normalized transient thermal resistance singlepulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =50c/w t on t p d indescendingorderd=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse 10 20 30 40 50 60 0.000001 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) dd d a v bv i l t - = t a =25c 0 10 20 30 40 50 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c alpha & omega semiconductor, ltd. www.aosmd.com
AOD456 + vdc ig vds dut + vdc vgs vgs 10v qg qgs qgd charge gatechargetestcircuit&waveform ig vgs + vdc dut l vgs vds isd isd dioderecoverytestcircuit&waveforms vds vds+ i f di/dt i rm rr vdd vdd q=idt t rr + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistiveswitchingtestcircuit&waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut + vdc l vgs vds id vgs bv i unclampedinductiveswitching(uis)testcircuit& waveforms vds ar dss 2 e=1/2li ar ar alpha & omega semiconductor, ltd. www.aosmd.com
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